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RB491D
Diodes
Shottky barrier diode
RB491D
Application External dimensions (Unit : mm) Lead size figure (Unit : mm)
0.8MIN.
Low current rectification
2.90.2 Each lead has same dimension 0.15 0.06 (3)
0.1
2.80.2
1.60.1
Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability.
0.95
0.2
00.1 0.30.6
SMD3
1.9
(2)
(1) 0.95 1.90.2
0.80.1 1.10.2 0.01
Structure Silicon epitaxial planar
0.95
Structure
ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code
Taping dimensions (Unit : mm)
4.00.1 2.00.05 1.50.1 0 1.750.1 0.30.1
3.50.05
8.00.2
3.20.1
3.20.1
4.00.1
1.05MIN
00.5
5.50.2
3.20.1
1.350.1
Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz1cyc)(*1) Junction temperature Storage temperature
Symbol VRM VR Io IFSM Tj Tstg
Limits 25 20 1 3 125 -40 to +125
Unit V V A A
(*1)Rating of per diode
Electrical characteristics (Ta=25C) Parameter Symbol Min. VF Forward voltage IR Reverse current -
Typ. -
Max. 0.45 200
Unit V A
Conditions IF=1A VR=20V
Rev.B
1/3
2.4
0.4 0.1 0.05
1.0MIN.
RB491D
Diodes
Electrical characteristic curves (Ta=25C)
1 Ta=75 100000 Ta=125 10000 1000 f=1MHz
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
Ta=125 0.1 Ta=25 Ta=-25 0.01
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1000 100 10
Ta=75 Ta=25
100
10
Ta=-25 1 0.1
0.001 0 200 400 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 600
1 0 5 10 15 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 20 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
420
500 Ta=25 IF=1A n=30pcs 450 Ta=25 VR=20V n=30pcs
200 190 180 170 160 150 140 130 120 110 100 AVE:159.8pF Ta=25 f=1MHz VR=0V n=10pcs
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(uA)
410
350 300 250 200 150 100 50 0 AVE:37.93uA
400
390 AVE:399.2m 380 VF DISPERSION MAP
IR DISPERSION MAP
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
400
Ct DISPERSION MAP
30
20
20
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
Ifsm 20
1cyc 8.3ms
RESERVE RECOVERY TIME:trr(ns)
15
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
Ifsm 15 8.3ms 8.3ms 1cyc 10
10
10
5 AVE:9.3ns 0 trr DISPERSION MAP
5
AVE:11.1A 0
0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
IFSM DISRESION MAP
20
1000
1 Per chip Rth(j-a) Rth(j-c)
Ifsm 15 t
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
PEAK SURGE FORWARD CURRENT:IFSM(A)
FORWARD POWER DISSIPATION:Pf(W)
100
D=1/2 0.5 Sin(180)
DC
10
Mounted on epoxy board
10
IM=1mA
IF=10mA
5
1ms
time
300us
0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
1 0.001
0 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 2
Rev.B
2/3
RB491D
Diodes
0.3 Per chip
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
3
3 Per chip Per chip
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.25
REVERSE POWER DISSIPATION:PR (W)
2.5
0A 0V t D=1/2 DC T
Io VR D=t/T VR=10V Tj=125
2.5 2 DC 1.5 D=1/2 1 0.5 0
0A 0V t T
Io VR D=t/T VR=10V Tj=125
0.2 0.15 D=1/2 0.1 0.05 0 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS DC Sin(180)
2
1.5
1
0.5
Sin(180) 0 25 50 75 100 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 125
Sin(180)
0 0 25 50 75 100 125
AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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